Replaces DS5533-3.1
DIM1600FSM12-A000
Single Switch IGBT Module
DS5533-4 October 2010 (LN27611)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1600FSM12-A000 is a single switch 1200V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
1200V
2.2V
1600A
3200A
* Measured at the power busbars, not the auxiliary terminals
7(C)
9(G)
1(C)
2(C)
8(E)
3(E)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1600FSM12-A000
Note: When ordering, please use the complete part
number
Outline type code: F
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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