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DIM500ACM65-TS000 Datasheet Preview

DIM500ACM65-TS000 Datasheet

Single Switch IGBT Module

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Preliminary Information
DIM500ACM65-TS000
Single Switch IGBT Module
DS6182-1 January 2016 (LN33268)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 2400A.
The DIM500ACM65-TS000 is a 6500V, soft punch
through n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) chopper module. The IGBT
has a wide reverse bias safe operating area (RBSOA)
plus 10μs short circuit withstand. This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
6500V
3.0V
500A
1000A
* Measured at the auxiliary terminals
3(C)
2(G)
9(C) 7(C) 5(A)
1(E)
8(E) 6(E) 4(K)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM500ACM65-TS000
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




Dynex

DIM500ACM65-TS000 Datasheet Preview

DIM500ACM65-TS000 Datasheet

Single Switch IGBT Module

No Preview Available !

DIM500ACM65-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES Collector-emitter voltage
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value (IGBT arm)
Diode I2t value (Diode arm)
Isolation voltage per module
Partial discharge per module
Test Conditions
VGE = 0V, Tj = 125°C
VGE = 0V, Tj = 25°C
VGE = 0V, Tj = -40°C
Tcase = 95°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 125°C
VR = 0, tp = 10ms, Tj = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
6500
6500
6000
±20
500
1000
6.6
90
90
V
V
V
V
A
A
kW
kA2s
kA2s
10.2 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c) Thermal resistance transistor
Rth(j-c) Thermal resistance diode (IGBT arm)
Rth(j-c) Thermal resistance diode (Diode arm)
Rth(c-h) Thermal resistance case to heatsink
Tj Junction temperature
Tstg Storage temperature range
Screw torque
Test Conditions
Continuous dissipation
junction to case
Continuous dissipation
junction to case
Continuous dissipation
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting M6
Electrical connections M4
Electrical connections M8
Min Typ. Max Units
15 °C/kW
30 °C/kW
30 °C/kW
8 °C/kW
125 °C
125 °C
-40 125 °C
5 Nm
2 Nm
10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM500ACM65-TS000
Description Single Switch IGBT Module
Maker Dynex
Total Page 8 Pages
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