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Dynex

DIM750ASM65-TS000 Datasheet Preview

DIM750ASM65-TS000 Datasheet

Single Switch IGBT Module

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Replaces DS6171-2
Preliminary Information
DIM750ASM65-TS000
Single Switch IGBT Module
DS6171-3 October 2015 (LN33002)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 2400A.
The DIM750ASM65-TS000 is a single switch 6500V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10μs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
6500V
3.0V
750A
1500A
* Measured at the auxiliary terminals
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM750ASM65-TS000
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




Dynex

DIM750ASM65-TS000 Datasheet Preview

DIM750ASM65-TS000 Datasheet

Single Switch IGBT Module

No Preview Available !

DIM750ASM65-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES Collector-emitter voltage
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage per module
Partial discharge per module
Test Conditions
VGE = 0V, Tj = 125°C
VGE = 0V, Tj = 25°C
VGE = 0V, Tj = -40°C
Tcase = 95°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 125°C
VR = 0, tp = 10ms, Tj = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
6500
6500
6000
±20
750
1500
10
200
V
V
V
V
A
A
kW
kA2s
10.2 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c) Thermal resistance transistor
Rth(j-c) Thermal resistance diode
Rth(c-h) Thermal resistance case to heatsink
Tj Junction temperature
Tstg Storage temperature range
Screw torque
Test Conditions
Continuous dissipation
junction to case
Continuous dissipation
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting M6
Electrical connections M4
Electrical connections M8
Min Typ. Max Units
10 °C/kW
20 °C/kW
6 °C/kW
125 °C
125 °C
-40 125 °C
5 Nm
2 Nm
10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM750ASM65-TS000
Description Single Switch IGBT Module
Maker Dynex
Total Page 8 Pages
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