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DIM100WHS17-E000 - IGBT Power Module

Key Features

  • I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY.

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Datasheet Details

Part number DIM100WHS17-E000
Manufacturer Dynex Semiconductor
File Size 341.22 KB
Description IGBT Power Module
Datasheet download datasheet DIM100WHS17-E000 Datasheet

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www.DataSheet4U.com DIM100WHS17-E000 DIM100WHS17-E000 Half Bridge IGBT Module PDS5719-1.2 February 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0V 100A 200A APPLICATIONS I I I Motor Drives Wind Turbines UPS Systems 7(E2) 6(G2) 1(E1C2) 2(E2) 3(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100WHS17-E000 is a half bridge 1700V, DataSheet4U.com n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.