DIM1200NSM17-E000 - Single Switch IGBT Module

Dynex Semiconductor

Key Features

I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY.

DIM1200NSM17-E000 single switch igbt module by Dynex Semiconductor - Datasheet Preview

Datasheet Details

Part number	DIM1200NSM17-E000
Manufacturer	Dynex Semiconductor
File Size	188.32 KB
Description	Single Switch IGBT Module
Datasheet	DIM1200NSM17-E000 Datasheet

Full PDF Text Transcription for DIM1200NSM17-E000 (Reference)

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DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004 FEATURES I I I I I I...

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version, issue PDS5644-2.0 PDS5644-3.0 July 2004 FEATURES I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.0V 1200A 2400A *Measured at auxiliary terminals. External connection C1 C2 APPLICATIONS I Aux C High Reliability Inverters G G G Wind Turbines Motor Controllers UPS Systems G Aux E E1 E2 I Traction G G External connection Propulsion Drives Auxiliaries Fig.

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