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Dynex Semiconductor

DIM800NSM33-F000 Datasheet Preview

DIM800NSM33-F000 Datasheet

Single Switch IGBT Module

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FEATURES
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
High Thermal Cycling Capability
10µs Short Circuit Withstand
Lead Free construction
Single Switch IGBT Module
PDS5615-4.1 January 2009(LN26570)
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
I C (max)
I C(PK)
(max)
*(measured at the auxiliary terminals)
3300V
2.8V
800A
1600A
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V
to 6500V and currents up to 3600A.
The DIM800NSM33-F000 is a single switch 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800NSM33-F000
Note: When ordering, please use the complete part
number
Outline type code: N
(See Fig. 11 for further information)
Fig. 2 Package
1/8ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ




Dynex Semiconductor

DIM800NSM33-F000 Datasheet Preview

DIM800NSM33-F000 Datasheet

Single Switch IGBT Module

No Preview Available !

DIM800NSM33-F000
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max. Units
VCES Collector-emitter voltage
VGE = 0V
3300 V
VGES
IC
Gate-emitter voltage
Continuous collector current
Tcase = 90 °C
±20 V
800 A
IC(PK) Peak collector current
1ms, Tcase= 115 °C
1600 A
Pmax
I2t
Visol
QPD
Max. transistor power dissipation
Diode I2t value
Isolation voltage
Partial discharge
Tcase = 25 °C, Tj = 150 °C
VR = 0V, tp = 10ms, Tj = 125 °C
Commoned terminals to base plate.
AC RMS,1 min, 50Hz
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
10.4
320
6
10
kW
kA2s
kV
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 350
Symbol
Parameter
Test Conditions
Min Typ. Max Units
Rth(j-c) Thermal resistance - transistor Continuous dissipation - junction to case
12 °C/kW
Rth(j-c)
Rth(c-h)
Thermal resistance - diode
Thermal resistance - case to
heatsink
Tj Junction temperature
Continuous dissipation - junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
24 °C/kW
8 °C/kW
150 °C
Diode
125 °C
Tstg Storage temperature range
Screw torque
Mounting M6
-40 125 °C
5 Nm
Electrical connections – M4
2 Nm
Electrical connections – M8
10 Nm
2/8: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM800NSM33-F000
Description Single Switch IGBT Module
Maker Dynex Semiconductor
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