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E-DA SEMICONDUCTOR

RS1MF Datasheet Preview

RS1MF Datasheet

SURFACE MOUNT FAST RECOVERY RECTIFIER

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E-DA SEMICONDUCTOR
RoHS Compliant Product
RS1AF~RS1MF
SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes
SMAF
Unit: inch (mm)
FEATURES
  Green
0.165 4.20
0.130 3.30
0.212 5.33
0.175 4.45
0.041 1.05
0.037 0.90
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Fast Recovery times for high efficiency
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
0.047 1.20
0.024 0.60
0.047 1.20
0.024 0.60
MECHANICAL DATA
Case: JEDEC SMAF molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
S YMB OL RS1AF RS1BF RS1DF RS1GF RS1JF RS1KF RS1MF UNIT
V RRM
50 100 200 400 600 800 1000 V
V RMS
35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Rectified Current at TL=90 OC
IO
1.0 A
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 1.0A
Maximum DC Reverse Current TA=25OC
at Rated DC Blocking Voltage TA=125OC
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 1 )
IF S M
VF
IR
TRR
30 A
1.3 V
5.0
150
uA
150
250 500
ns
Maximum Junction capacitance (Note 2)
CT
12 pF
TYPICAL THERMAL RESISTANCE
PARAMETER
Typ i c a l J unc ti o n Re s i s ta nc e (No te 3 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ti ng
YM B OL RS1AF RS1BF RS1DF RS1GF RS1JF RS1KF
R θJ A
R θJ L
100
32
TJ,TSTG
-55 TO +150
RS1MF UNIT
OC / W
OC
NOTES:1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
DATA1 .JAN.2017
PAGE . 1




E-DA SEMICONDUCTOR

RS1MF Datasheet Preview

RS1MF Datasheet

SURFACE MOUNT FAST RECOVERY RECTIFIER

No Preview Available !

E-DA SEMICONDUCTOR
RS1AF~RS1MF
RoHS Compliant Product
RATING AND CHARACTERISTIC CURVES
3.0
2.5
2.0
1.5
1.0
0.5
0
0
SINGLEPHASE, HALF-WAVE,60Hz RESISTIVE
OR INDUCTIVELOAD P.C.B MOUNTED
NO 0.315x0.315"(8.0 x 8.0mm)
COPPER PAD AREAS
50 100
LEAD TEMPERATURE, OC
150
Fig.1 FORWARD CURRENT DERATING CURVE
10
1.0
0.1
.01
TJ= 2 5OC
.001
0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
8.3ms Single Half Sine-Wave
25 JEDEC Method
20
15
10
5
0
12
6 10
20 40 60 100
NUMBER OF CYCLES AT 60Hz
Fig.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
Tj= 25OC
f= 1.0MHz
Vsig = 50mVp -p
10
1
0.1 1
10 100
REVERSE VOLTAGE, VOLTS
Fig.4 TYPICAL JUNCTION CAPACITANCE
DATA1 .JAN.2017
PAGE . 2


Part Number RS1MF
Description SURFACE MOUNT FAST RECOVERY RECTIFIER
Maker E-DA SEMICONDUCTOR
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RS1MF Datasheet PDF






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