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XTR25010 - High Temperature Power Gate Driver

Description

XTR25010 is a high-temperature, high reliability power transistor driver integrated circuit designed to drive normally ON and normally-OFF power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.

Features

  • Operational beyond the -60°C to +230°C temperature range.
  • High voltage supply from 7V to 35V.
  • Low voltage supply from 4.5V to 5.5V.
  • Integrated charge-pump inside pull-up drivers allowing 100% duty- cycle PWM control signal.
  • Double pull-up drivers with combined 8A peak and 2A continuous current capability at TC=230°C.
  • Two pull-down drivers with 3A peak current capability at TC=230°C for each driver.
  • Nonoverlapped pull-up and pul.

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Datasheet preview – XTR25010

Datasheet Details

Part number XTR25010
Manufacturer EASii
File Size 1.41 MB
Description High Temperature Power Gate Driver
Datasheet download datasheet XTR25010 Datasheet
Additional preview pages of the XTR25010 datasheet.

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Full PDF Text Transcription

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XTR25010 High Temperature Power Gate Driver Data Sheet Rev 3 – August 2021 (DS-00395-13) PRODUCTION XTRPPPPP YYWWANN LJCC52 XTR25011 FEATURES • Operational beyond the -60°C to +230°C temperature range. • High voltage supply from 7V to 35V. • Low voltage supply from 4.5V to 5.5V • Integrated charge-pump inside pull-up drivers allowing 100% duty- cycle PWM control signal. • Double pull-up drivers with combined 8A peak and 2A continuous current capability at TC=230°C. • Two pull-down drivers with 3A peak current capability at TC=230°C for each driver. • Nonoverlapped pull-up and pull-down outputs. • Enable input signal for driver outputs reset. • Latch-up free. • Ruggedized SMT packages and also available as bare die.
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