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XTR25010 Datasheet High Temperature Power Gate Driver

Manufacturer: EASii

Overview: XTR25010 High Temperature Power Gate Driver Data Sheet Rev 3 – August 2021 (DS-00395-13) PRODUCTION XTRPPPPP YYWWANN LJCC52.

Datasheet Details

Part number XTR25010
Manufacturer EASii
File Size 1.41 MB
Description High Temperature Power Gate Driver
Datasheet XTR25010-EASii.pdf

General Description

XTR25010 is a high-temperature, high reliability power transistor driver integrated circuit designed to drive normally ON and normally-OFF power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.

For turning on the power transistors, the XTR25010 includes two independent pull-up gate-drive-channels (PU_DR1 and PU_DR2) capable of sourcing 4A at 230°C peak current each.

For turning off the power transistors, the XTR25010 includes two pull-down gate-drivechannels capable of sinking 3A at 230°C peak current each (PD_DR and PD_MC).

Key Features

  • Operational beyond the -60°C to +230°C temperature range.
  • High voltage supply from 7V to 35V.
  • Low voltage supply from 4.5V to 5.5V.
  • Integrated charge-pump inside pull-up drivers allowing 100% duty- cycle PWM control signal.
  • Double pull-up drivers with combined 8A peak and 2A continuous current capability at TC=230°C.
  • Two pull-down drivers with 3A peak current capability at TC=230°C for each driver.
  • Nonoverlapped pull-up and pul.

More Datasheets from EASii

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XTR25010 Distributor