XTR25010 Description
XTR25010 is a high-temperature, high reliability power transistor driver integrated circuit designed to drive normally ON and normally-OFF power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs. For turning on the power transistors, the XTR25010 includes two independent pull-up gate-drive-channels (PU_DR1 and PU_DR2) capable of...
XTR25010 Key Features
- Operational beyond the -60°C to +230°C temperature range
- High voltage supply from 7V to 35V
- Low voltage supply from 4.5V to 5.5V
- Integrated charge-pump inside pull-up drivers allowing 100% duty
- Double pull-up drivers with bined 8A peak and 2A continuous
- Two pull-down drivers with 3A peak current capability at TC=230°C
- Nonoverlapped pull-up and pull-down outputs
- Enable input signal for driver outputs reset
- Latch-up free
- Ruggedized SMT packages and also available as bare die