• Part: EDI8L21664V
  • Description: External SRAM Memory Solution
  • Manufacturer: EDI
  • Size: 90.09 KB
EDI8L21664V Datasheet (PDF) Download
EDI
EDI8L21664V

Description

Input High Voltage Input Low Voltage Supply Voltage Sym VIH VIL Vcc Min 2.2 -0.3 3.0 Max Vcc+0.5 0.8 3.6 Units V V V AC Test Conditions Input Pulse Levels Input Rise and Fall Times (Max) Input and Output Timing Levels Output Load VSS to 3.0V 1.5ns 1.5V See Figure 1 Capacitance (f=1.0MHz, VIN=VCC or VSS) Parameter Address Lines Data Lines Control Lines Sym CA CD/Q CC Max 8 17 15 Unit pF pF pF Figure 1 DC (f=1.0MHz, VIN=VCC or VSS) Parameter Power Supply Current: Operating CMOS Standby TTL Standby Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Sym ICC1 Conditions Device Selected; all inputs ≤VIL or ≥VIH; cycle time ≥tKC MIN; VCC=MAX; outputs open Device deselected; VCC=MAX; all inputs ≤ VSS +0.2 or ≥ VCC -0.2.

Key Features

  • DSP Memory Solution
  • One Research Drive
  • Westborough, MA 01581 USA
  • 508-366-5151
  • FAX 508-836-4850