EG3012
Description
The EG3012 is a cost effective half-bridge driver IC designed for N-channel MOSFETs and IGBTs.
Key Features
- Floating high side driver in bootstrap operation to +100V, build in bootstrap diode
- Internal fixed dead time of 120nS
- Under voltage lockout for Vcc
- Cross-conduction prevention logic
- 800mA source/1000mA sink output current capability
- Driving N-channel MOSFETs and IGBTs in a half-bridge configuration
- High side output in phase with HIN input
- Low side output in phase with LIN input
- Low quiescent current：4.5mA
- Package：SOP8
