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10A01 - SILICON RECTIFIER DIODE

Datasheet Summary

Features

  • :.
  • Diffused Junction.
  • High current capability and Low Forward Voltage Drop.
  • Surge Overload Rating to 400A Peak.
  • Low Reverse Leakage Current.
  • Pb / RoHS Free.

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Datasheet Details

Part number 10A01
Manufacturer EIC
File Size 120.90 KB
Description SILICON RECTIFIER DIODE
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www.eicsemi.com 10A01-10A07 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * Diffused Junction * High current capability and Low Forward Voltage Drop * Surge Overload Rating to 400A Peak * Low Reverse Leakage Current * Pb / RoHS Free MECHANICAL DATA : * Case : molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.049 grams D6 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
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