900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






EIC

10A01 Datasheet Preview

10A01 Datasheet

SILICON RECTIFIER DIODE

No Preview Available !

www.eicsemi.com
10A01-10A07
SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* Diffused Junction
* High current capability and Low Forward
Voltage Drop
* Surge Overload Rating to 400A Peak
* Low Reverse Leakage Current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.049 grams
D6
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current (Note 1) Ta = 50 °C
Non-Repetitive Peak Forward Surge Current 8.3 ms
VRRM
VRMS
VDC
IO
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
10
A
Single half sine wave superimposed on rated load
IFSM
400
A
(JEDEC Method)
Maximum Forward Voltage at IF = 10 Amps.
VF
Maximum DC Reverse Current Ta = 25 °C
IR
at rated DC Blocking Voltage Ta = 100 °C
IR(H)
Typical Junction Capacitance (Note 2)
Cj
1.0
V
10
μA
100
μA
150
80
pF
Typical Thermal Resistance
Operating and Storage Temperature Range
RθJC
TJ, TSTG
10
- 65 to + 150
°C/W
°C
Notes :
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.
Page 1 of 2
Rev. 03 : Fabruary 12, 2010




EIC

10A01 Datasheet Preview

10A01 Datasheet

SILICON RECTIFIER DIODE

No Preview Available !

www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( 10A01 - 10A07 )
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
8.0
6.0
4.0
2.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
8.3 ms Single Half Sine-Wave
JEDC Method
400
300
200
100
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
Pulse Width = 300 μs
2% Duty Cycle
1.0
TJ = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG.4 - TYPICAL JUNCTION CAPACITANCE
100
TJ = 25 °C
f = 1MHz
10
10A01-10A04
10A05-10A07
1.0
0.1
0
10
100
REVERSE VOLTAGE (V)
Page 2 of 2
Rev. 03 : Fabruary 12, 2010


Part Number 10A01
Description SILICON RECTIFIER DIODE
Maker EIC
Total Page 2 Pages
PDF Download

10A01 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 10A01 Rectifier
MCC
2 10A01 10A RECTIFIER
Diodes
3 10A01 SILICON RECTIFIER DIODE
EIC
4 10A02 Rectifier
MCC
5 10A02 10A RECTIFIER
Diodes
6 10A02 SILICON RECTIFIER DIODE
EIC
7 10A03 Rectifier
MCC
8 10A03 10A RECTIFIER
Diodes
9 10A03 SILICON RECTIFIER DIODE
EIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy