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1N4149
HIGH SPEED SWITCHING DIODE
PRV : 100 Volts Io : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately)
DO - 35
0.079(2.0 )max. 0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.