Datasheet4U Logo Datasheet4U.com

1N4152 - HIGH SPEED SWITCHING DIODE

Key Features

  • :.
  • High switching speed: max. 4 ns.
  • Peak reverse voltage:max. 40 V.
  • Pb / RoHS Free.

📥 Download Datasheet

Datasheet Details

Part number 1N4152
Manufacturer EIC
File Size 154.73 KB
Description HIGH SPEED SWITCHING DIODE
Datasheet download datasheet 1N4152 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1N4152 Silicon Switching Diode Central Semiconductor
1N4152 Small Signal Diode Fairchild Semiconductor
1N4152 SMALL SIGNAL SWITCHING DIODES Sunmate
1N4150 HIGH SPEED SWITCHING DIODES DC COMPONENTS
1N4150 Small Signal Fast Switching Diodes Vishay

Other Datasheets by EIC

Part Number Description
1N4150 HIGH SPEED SWITCHING DIODE
1N4151 HIGH SPEED SWITCHING DIODE
1N4153 HIGH SPEED SWITCHING DIODE
1N4154 HIGH SPEED SWITCHING DIODE
1N4148S HIGH SPEED SWITCHING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.eicsemi.com 1N4152 FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted) Parameter Maximum Peak Reverse Voltage Maximum Average Forward Current Maximum Non-repetitive Peak Forward Surge Current at tp = 1s at tp =1 µs Thermal Resistance Junction to Ambient Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Symbol VRM IF(AV) IFSM RӨJA PD TJ TSTG Value 40 150 1.0 4.