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EIC

1N5626 Datasheet Preview

1N5626 Datasheet

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
1N5624 - 1N5627
PRV : 200 - 800 Volts
Io : 3.0 Amperes
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
D2A
FEATURES :
* Glass passivated cavity-free junction
* Low forward voltage drop
* High reliability
* Low reverse current
* High forward surge capability
* Pb / RoHS Free
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.0400 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current, 8.3ms Single half
sine wave Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage
Maximum DC Reverse Current
at IF = 3.0 A , Ta = 25 °C
at IF = 3.0 A , Ta = 175 °C
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 175 °C
Maximum Full Load Reverse Current, Full Cycle Average
0.375"(9.5mm) Lead Length at Ta = 70 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
1N5624
200
140
200
1N5625
400
280
400
1N5626
600
420
600
1N5627
800
560
800
IF(AV)
3.0
UNIT
V
V
V
A
IFSM
VF
IR
IR(H)
IR(AV)
CJ
RӨJA
RӨJL
TJ
TSTG
125
1.00
0.95
5.0
300 200
150 100
40
20
10
- 65 to + 175
- 65 to + 175
A
V
µA
µA
µA
pF
°C/W
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
with both leads attached between heat sinks
Page 1 of 2
Rev. 02 : July 19, 2006




EIC

1N5626 Datasheet Preview

1N5626 Datasheet

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

No Preview Available !

www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( 1N5624 ~ 1N5627 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
60 Hz Resistive
2.4 or Inductive Load
1.8
1.2
0.6
0.375"(9.5mm) Lead Length
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
100
TJ = TJmax.
8.3ms Single Half sine wave
(JEDEC Method)
10
1
10 100
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
10
TJ = 150 °C
1.0
TJ = 25 °C
0.1
0.01
0
Pulse Width = 300 µs
1% Duty Cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD
VOLTAGE, (V)
100
TJ = 25 °C
f = 1MHz
Vsig = 50mVp-p
40
20
10
1
2
10 20
40 100
REVERSE VOLTAGE, (A)
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100
1.0
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0 20 40 60 80 100
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : July 19, 2006


Part Number 1N5626
Description GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Maker EIC
Total Page 2 Pages
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