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EIC

2KBP10 Datasheet Preview

2KBP10 Datasheet

SILICON BRIDGE RECTIFIERS

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www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
2KBP005 - 2KBP10
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.448 (11.4)
0.433 (11.0)
0.696 (17.7)
MIN.
0.051 (1.30)
0.043 (1.10)
KBP
0.59 (14.9)
0.57 (14.5)
+ AC AC
Φ3
0.0307 (0.78)
0.0303 (0.77)
0.150 (3.82)
0.148 (3.78)
0.151 (3.85 )
0.147 (3.75)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.d
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current Ta= 55°C
Peak Forward Surge Current, Single sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Instantaneous Forward Voltage drop at IF =1.0 A, TJ=25ºC
Maximum DC Reverse Current
Ta= 25 °C
at Rated DC Blocking Voltage per element Ta= 125 °C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
2KBP
005
2KBP
01
2KBP
02
2KBP
04
2KBP
06
2KBP
08
2KBP
10
UNIT
VRRM
50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF(AV) 2.0 A
IFSM
60 A
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
15
1.0
10
500
25
30
- 50 to + 165
- 50 to + 165
A2S
V
μA
μA
pF
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
Page 1 of 2
Rev. 04 : December 10, 2009




EIC

2KBP10 Datasheet Preview

2KBP10 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( 2KBP005 - 2KBP10 )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
60 Hz, Resistive or
inductive load.
1.5
1.0
P.C. Board Mounted with
0.5 0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
80
70
60
Ta = 55 °C
50
40
30
20
8.3 ms SINGLE HALF SINE WAVE
10 JEDEC METHOD
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
Pulse Width = 300 μs
1 % Duty Cycle
1.0
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 0.1 TJ = 25 °C
0.01
0
0.2 0.4
TJ = 25 °C
0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE, VOLTS
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE PER ELEMENT
100
40
20
10
TJ = 25 °C
4 f = 1MHz
Vsig = 50mVp-p
2
1
0.1 0.2 0.4 1 2 4 10 20 40
REVERSE VOLTAGE, VOLTS
100
Page 2 of 2
Rev. 04 : December 10, 2009


Part Number 2KBP10
Description SILICON BRIDGE RECTIFIERS
Maker EIC
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2KBP10 Datasheet PDF






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