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3EZ5.1D10 Datasheet Preview

3EZ5.1D10 Datasheet

SILICON ZENER DIODES

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3EZ5.1D10 pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts
PD : 3 Watts
DO - 41
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
0.108 (2.74)
0.078 (1.99)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at TL = 75 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Symbol
PD
VF
RθJA
TJ
Ts
Value
3.0
1.5
60
- 55 to + 175
- 55 to + 175
Unit
W
V
K/W
°C
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 Power Temperature Derating Curve
5
L = LEAD LENGTH
4
L = 1/8"
TO HEAT SINK
3 L = 3/8"
2
L = 1"
1
0
0 40 80 120 160 200
TL, LEAD TEMPERATURE (°C)
Page 1 of 3
Rev. 04 : November5, 2007



EIC
EIC

3EZ5.1D10 Datasheet Preview

3EZ5.1D10 Datasheet

SILICON ZENER DIODES

No Preview Available !

3EZ5.1D10 pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
Nominal Zener
Maximum Zener
TYPE
Voltage
VZ @ IZT
IZT
(V) (mA)
ZZT @ IZT
()
Impedance
ZZK @ IZK
()
IZK
(mA)
3EZ3.9D10
3EZ4.3D10
3EZ4.7D10
3EZ5.1D10
3EZ5.6D10
3EZ6.2D10
3EZ6.8D10
3EZ7.5D10
3EZ8.2D10
3EZ9.1D10
3EZ10D10
3EZ11D10
3EZ12D10
3EZ13D10
3EZ14D10
3EZ15D10
3EZ16D10
3EZ17D10
3EZ18D10
3EZ19D10
3EZ20D10
3EZ22D10
3EZ24D10
3EZ27D10
3EZ28D10
3EZ30D10
3EZ33D10
3EZ36D10
3EZ39D10
3EZ43D10
3EZ47D10
3EZ51D10
3EZ56D10
3EZ62D10
3EZ68D10
3EZ75D10
3EZ82D10
3.9 192 4.5 400 1.0
4.3 174 4.5 400 1.0
4.7 160 4.0 500 1.0
5.1 147 3.5 550 1.0
5.6 134 2.5 600 1.0
6.2 121 1.5 700 1.0
6.8 110 2.0 700 1.0
7.5 100 2.0 700 0.5
8.2 91 2.3 700 0.5
9.1 82 2.5 700 0.5
10 75 3.5 700 0.3
11 68 4.0 700 0.25
12 63 4.5 700 0.25
13 58 4.5 700 0.25
14 53 5.0 700 0.25
15 50 5.5 700 0.25
16 47 5.5 700 0.25
17 44 6.0 750 0.25
18 42 6.0 750 0.25
19 40 7.0 750 0.25
20 37 7.0 750 0.25
22 34 8.0 750 0.25
24 31 9.0 750 0.25
27 28 10 750 0.25
28 27 12 750 0.25
30
25
16
1000
0.25
33
23
20
1000
0.25
36
21
22
1000
0.25
39
19
28
1000
0.25
43
17
33
1500
0.25
47
16
38
1500
0.25
51
15
45
1500
0.25
56
13
50
2000
0.25
62
12
55
2000
0.25
68
11
70
2000
0.25
75
10
85
2000
0.25
82
9.1
95
3000
0.25
Maximum Reverse
Leakage Current
IR @ VR
(μA) (V)
80 1.0
30 1.0
20 1.0
5.0 1.0
5.0 2.0
5.0 3.0
50 4.0
50 5.0
50 6.0
50 7.0
50 7.6
50 8.4
1.0 9.1
0.5 9.9
0.5 10.6
0.5 11.4
0.5 12.2
0.5 13.0
0.5 13.7
0.5 14.4
0.5 15.2
0.5 16.7
0.5 18.2
0.5 20.6
0.5 21.0
0.5 22.5
0.5 25.1
0.5 27.4
0.5 29.7
0.5 32.7
0.5 35.6
0.5 38.8
0.5 42.6
0.5 47.1
0.5 51.7
0.5 56.0
0.5 62.2
Maximum DC
Zener Current
IZM
(mA)
630
590
550
520
480
435
393
360
330
297
270
225
246
208
193
180
169
159
150
142
135
123
112
100
96
90
82
75
69
63
57
53
48
44
40
36
33
Page 2 of 3
Rev. 04 : November5, 2007


Part Number 3EZ5.1D10
Description SILICON ZENER DIODES
Maker EIC
Total Page 3 Pages
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