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EIC

BAV70W Datasheet Preview

BAV70W Datasheet

Silicon Epitaxial Planar Switching Diode

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Certificate TH97/10561QM
Certificate TW00/17276EM
BAV70W
Silicon Epitaxial Planar Switching Diode
Features
• Fast switching diode
• Ultra small surface mount package
SOT-323
3
12
Dimensions in millimeters
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Single diode loaded
Double diode loaded
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 μs
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IF
IFRM
IFSM
Ptot
Tj
Tstg
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 100 µA
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Reverse Leakage Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
Diode Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100
Symbol
VBR(R)
VF
IR
Ctot
trr
Value
100
75
175
100
500
0.5
1
4
200
150
- 65 to + 150
Min. Max.
75 -
- 0.715
- 0.855
-1
- 1.25
- 30
- 2.5
- 60
- 100
-2
-4
Unit
V
V
mA
mA
A
mW
OC
OC
Unit
V
V
nA
µA
µA
µA
pF
ns
Page 1 of 2
Rev. 03 : May 8, 2011




EIC

BAV70W Datasheet Preview

BAV70W Datasheet

Silicon Epitaxial Planar Switching Diode

No Preview Available !

Certificate TH97/10561QM
Certificate TW00/17276EM
Page 2 of 2
Rev. 03 : May 8, 2011


Part Number BAV70W
Description Silicon Epitaxial Planar Switching Diode
Maker EIC
Total Page 2 Pages
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