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EIC

KBP206 Datasheet Preview

KBP206 Datasheet

SILICON BRIDGE RECTIFIERS

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KBP200 - KBP210
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.825 (20.95)
0.605 (15.36)
0.500 (12.7)
MIN.
0.105 (2.66)
0.085 (2.16)
KBP
0.71 (18.0)
0.63 (16.0)
+ AC AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current, Single half sine wave
SYMBOL
VRRM
VRMS
VDC
IF(AV)
KBP
200
50
35
50
KBP
201
100
70
100
KBP
202
200
140
200
KBP
204
400
280
400
2.0
KBP
206
600
420
600
KBP
208
800
560
800
KBP
210
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
60
10
1.0
10
1.0
24
30
- 50 to + 125
- 50 to + 125
Amps.
A2S
Volts
µA
mA
pF
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000




EIC

KBP206 Datasheet Preview

KBP206 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
1.5 60 Hz, Resistive or
inductive load.
1.0
0.5
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
0
0 25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
80
70
60
TJ = 55 °C
50
40
30
20
10 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
140


Part Number KBP206
Description SILICON BRIDGE RECTIFIERS
Maker EIC
Total Page 2 Pages
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