• Part: 1N4490
  • Description: SILICON ZENER DIODES
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 122.12 KB
Download 1N4490 Datasheet PDF
EIC Semiconductor
1N4490
1N4490 is SILICON ZENER DIODES manufactured by EIC Semiconductor.
- Part of the 1N4465 comparator family.
FEATURES : - Silicon power zener diodes - plete Voltage Range 3.3 to 200 Volts - High peak reverse power dissipation - High reliability - Low leakage current - Pb / Ro HS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : - Case : M1A Molded plastic - Epoxy : UL94V-O rate flame retardant - Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified) Rating Power Dissipation at Ta = 25 °C Maximum Forward Voltage at I F = 200 m A Thermal Resistance , Junction to Lead (Note 1) Operating Temperature Storage Temperature Range Note : (1) At 3/8"(10 mm) lead length form body. Symbol PD VF RӨJA TJ TSTG Value 1.5 1.0 42 - 65 to + 175 - 65 to + 175 Unit W V °C/W °C °C Fig. 1 POWER TEMPERATURE DERATING CURVE PD, MAXIMUM DISSIPATION (W) 1.5 1.2 0.9 0.6 L = 3/8" (10 mm) 0.3...