1N4755
1N4755 is SILICON ZENER DIODES manufactured by EIC Semiconductor.
FEATURES
:
- plete voltage range 3.3 to 200 Volts
- High peak reverse power dissipation
- High reliability
- Low leakage current
SILICON ZENER DIODES
- 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
- Case : DO-41 Molded plastic
- Epoxy : UL94V-O rate flame retardant
- Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed
- Polarity : Color band denotes cathode end
- Mounting position : Any
- Weight : 0.339 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherw ise specified
Rating
DC Power Dissipation at TL = 50 °C (Note1) Maximum Forward Voltage at IF = 200 m A Maximum Thermal Resistance Junction to Ambient Air (Note2) Junction Temperature Range Storage Temperature Range
Symbol
PD VF RθJA TJ Ts
Value
1.0 1.2 170
- 55 to + 175
- 55 to + 175
Unit
Watt Volts K/W °C °C
Note : (1) TL = Lead temperature at 3/8 " (9.5mm) from body (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Fig. 1 POWER TEMPERATURE DERATING CURVE 1.25
L = 3/8" (9.5mm)
PD, MAXIMUM DISSIPATION (WATTS)
1.00 0.75 0.50 0.25 0 25 50 75 100 125 TL, LEAD TEMPERATURE (°C) 150 175
UPDATE : SEPTEMBER 9, 2000
ELECTRICAL CHARACTERISTICS...
