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EIC discrete Semiconductors

BR600 Datasheet Preview

BR600 Datasheet

SILICON BRIDGE RECTIFIERS

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BR600 - BR610
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR6
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.158 (4.00)
0.142 (3.60)
0.445 (11.30)
0.405 (10.30)
AC
0.127 (3.20)
0.047 (1.20)
AC
0.62 (15.75)
0.58 (14.73)
0.042 (1.06)
0.038 (0.96)
0.27 (6.9)
0.23 (5.8)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc=50°C
IF(AV)
6.0 Amps.
Peak Forward Surge Current,
Single half sine wave Superimposed
on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
200 Amps.
64 A2S
Maximum Forward Voltage per Diode at IF =3 A. VF
1.0 Volts
Maximum DC Reverse Current Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
IR(H)
RθJC
200 µA
8.0 °C/W
Operating Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 40 to + 150
- 40 to + 150
°C
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
UPDATE : APRIL 23, 1998




EIC discrete Semiconductors

BR600 Datasheet Preview

BR600 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
6.0
5.0
4.0
3.0
2.0
1.0
0
0
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
25 50 75 100 125
150
CASE TEMPERATURE, ( °C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
240
200
160 TJ = 50 °C
120
80
40 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1.0 1 % Duty Cycle
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number BR600
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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