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EIC discrete Semiconductors

BR610 Datasheet Preview

BR610 Datasheet

SILICON BRIDGE RECTIFIERS

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www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
BR600 - BR610
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR6
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.158 (4.00)
0.142 (3.60)
0.445 (11.30)
0.405 (10.30)
AC
0.127 (3.20)
0.047 (1.20)
AC
0.62 (15.75)
0.58 (14.73)
0.042 (1.06)
0.038 (0.96)
0.27 (6.9)
0.23 (5.8)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
RATING
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc=50°C
IF(AV)
6.0
A
Peak Forward Surge Current,
Single half sine wave Superimposed
IFSM
200
A
on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I2t
64 A2S
Maximum Forward Voltage per Diode at IF =3 A. VF
1.0 V
Maximum DC Reverse Current Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200 µA
Typical Thermal Resistance (Note 1)
RθJC
8.0 °C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005




EIC discrete Semiconductors

BR610 Datasheet Preview

BR610 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
6.0
5.0
4.0
3.0
2.0
1.0
0
0
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm ) Al.-PLATE
25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse W idth = 300 µs
1.0 1 % Duty Cycle
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8
1.0 1.2
1.4 1.6
1.8
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
240
200
160 TJ = 50 °C
120
80
8.3 ms SINGLE HALF SINE WAVE
40 JEDEC METHOD
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005


Part Number BR610
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
PDF Download

BR610 Datasheet PDF






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