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EIC discrete Semiconductors

BR808 Datasheet Preview

BR808 Datasheet

SILICON BRIDGE RECTIFIERS

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BR800 - BR810
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
0.290 (7.36)
0.210 (5.33)
AC
0.77 (19.56)
0.73 (18.54)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 4.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
8.0 Amps.
IFSM
I2t
VF
IR
I R(H)
RθJC
TJ
TSTG
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 23, 1998




EIC discrete Semiconductors

BR808 Datasheet Preview

BR808 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( BR800 - BR810 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
HEAT-SINK MOUNTING, Tc
10 3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
8
6
4
2
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
10
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
T J = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120
PERCENT OF RATED
REVERSE VOLTAGE, (%)
140


Part Number BR808
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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