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EIC discrete Semiconductors

FKBP202 Datasheet Preview

FKBP202 Datasheet

FAST RECOVERY BRIDGE RECTIFIERS

No Preview Available !

FKBP200 - FKBP210
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength of 2000 V DC
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
FAST RECOVERY
BRIDGE RECTIFIERS
KBP
0.71 (18.0)
0.63 (16.0)
0.825 (20.95)
0.605 (15.36)
0.500
(12.7)
0.105 (2.66)
0.085 (2.16)
+ AC AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FKBP
200
FKBP
201
FKBP
202
FKBP
204
FKBP
206
FKBP
208
FKBP
210
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000
Maximum Average Forward Current Tc = 50 °C
IF(AV)
2.0
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
35
10
Maximum Forward Voltage drop per Diode at IF = 1.0 Amp. VF
1.3
Maximum DC Reverse Current
Ta = 25 °C
IR
10
at Rated DC Blocking Voltage
Ta = 100 °C
I R(H)
500
Maximum Reverse Recovery Time (Note 1)
Trr 150 250 500
Typical Thermal Resistance (Note 2)
RθJA
30
Operating Junction Temperature Range
TJ
- 50 to + 150
Storage Temperature Range
T STG
- 50 to + 150
UNIT
Volts
Volts
Volts
Amps.
Amps.
A2S
Volts
µA
µA
ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Ambient on P.C. Board with, 0.47" X 0.47" ( 12 mm. x 12 mm. ) Cu. pads.
UPDATE : APRIL 21, 1998




EIC discrete Semiconductors

FKBP202 Datasheet Preview

FKBP202 Datasheet

FAST RECOVERY BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( FKBP200 - FKBP210 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
+ 0.5 A
0
- 0.25 A
Trr
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.5
2.0
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
Tc = 50 °C
40
1.5 30
1.0 20
0.5
60Hz RESISTIVE OR INDUCTIVE LOAD
0 0 25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
10
01
2
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)


Part Number FKBP202
Description FAST RECOVERY BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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