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EIC discrete Semiconductors

HER301 Datasheet Preview

HER301 Datasheet

HIGH EFFICIENT RECTIFIER DIODES

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HER301 - HER308
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
HIGH EFFICIENT
RECTIFIER DIODES
DO-201AD
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
HER
301
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IF(AV)
IFSM
Maximum Forward Voltage at IF = 3.0 A
VF
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
IR
IR(H)
Trr
Typical Junction Capacitance ( Note 2 )
CJ
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
HER
302
100
70
100
HER
303
200
140
200
1.1
50
HER
304
300
210
300
HER
305
400
280
400
3.0
150
10
50
50
- 65 to + 150
- 65 to + 150
HER
306
600
420
600
HER
307
800
560
800
1.7
75
HER
308
1000
700
1000
UNIT
V
V
V
A
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002




EIC discrete Semiconductors

HER301 Datasheet Preview

HER301 Datasheet

HIGH EFFICIENT RECTIFIER DIODES

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( HER301 - HER308 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
+ 0.5 A
0
- 0.25 A
Trr
- 1.0 A
1 cm
SET TIME BASE FOR 25-35 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
2.4
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
8.3 ms SINGLE HALF SINE WAVE
120 Ta = 50 °C
1.8 90
1.2 60
0.6
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE, ( °C)
175
30
0
1
2
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
10
TJ = 100 °C
1.0
HER301-HER305
1.0
HER306-HER308
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
140
Page 2 of 2
Rev. 01 : April 2, 2002


Part Number HER301
Description HIGH EFFICIENT RECTIFIER DIODES
Maker EIC discrete Semiconductors
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HER301 Datasheet PDF






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