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EIC discrete Semiconductors
EIC discrete Semiconductors

RGP02-18E Datasheet Preview

RGP02-18E Datasheet

HIGH VOLTAGE FAST RECOVERY RECTIFIERS

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RGP02-18E pdf
RGP02-12E // 20E
PRV : 1200 - 2000 Volts
Io : 0.5 Ampere
HIGH VOLTAGE
FAST RECOVERY RECTIFIERS
DO - 41
FEATURES :
* Glass passivated junction
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Peak Forward Surge Current 8.3 ms. Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at 0.5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL RGP RGP RGP RGP RGP UNITS
02-12E 02-14E 02-16E 02-18E 02-20E
VRRM
1200 1400 1600 1800 2000 Volts
VRMS
840 980 1120 1260 1400 Volts
VDC 1200 1400 1600 1800 2000 Volts
IF(AV)
0.5 Amps.
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
20
2.5
5.0
50
300
5.0
- 65 to + 150
- 65 to + 150
Amps.
Volts
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
UPDATE : APRIL 23, 1998



EIC discrete Semiconductors
EIC discrete Semiconductors

RGP02-18E Datasheet Preview

RGP02-18E Datasheet

HIGH VOLTAGE FAST RECOVERY RECTIFIERS

No Preview Available !

RGP02-18E pdf
RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5 A
Trr
+
50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1 OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.5
0.4
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
25
8.3 ms SINGLE HALF SINE WAVE
20 Ta = 50 °C
0.3 15
0.2 10
0.1
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE, ( °C)
175
5
01 2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
2.0
1.0
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
0.1
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number RGP02-18E
Description HIGH VOLTAGE FAST RECOVERY RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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RGP02-18E pdf
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