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EIC discrete Semiconductors

SRN4 Datasheet Preview

SRN4 Datasheet

SURFACE MOUNT FAST RECOVERY RECTIFIERS

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SRN3 - SRN7
PRV : 50 - 600 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Junction Temperature Range
Storage Temperature Range
SYMBOL SRN3 SRN4 SRN5 SRN6 SRN7
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600
35 70 140 280 420
50 100 200 400 600
1.0
UNIT
V
V
V
A
IFSM 30 A
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
1.2
5
50
150
50
- 65 to + 150
- 65 to + 150
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002




EIC discrete Semiconductors

SRN4 Datasheet Preview

SRN4 Datasheet

SURFACE MOUNT FAST RECOVERY RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( SRN3 - SRN7 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5
Trr
+
50 Vdc
(approx.)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 50-100 ns/cm
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
24
0.6 18
0.4 12
0.2
60Hz RESISTIVE OR INDUCTIVE
0
0 25 50 75 100 125
150
AMBIENT TEMPERATURE, ( °C)
175
6
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
0.1
0.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
2.0
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : April 2, 2002


Part Number SRN4
Description SURFACE MOUNT FAST RECOVERY RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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