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ELM54801AA-N - Dual P-channel MOSFET

General Description

ELM54801AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Key Features

  • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Avalanche current Avalanche energy Power dissipation Junction and storage temperature range L=0.1mH Ta=25°C Ta=70°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Ias, Iar Eas, Ear Pd Tj, Tstg Limit -30 ±12 -5 -4 -28 17 14.

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Datasheet Details

Part number ELM54801AA-N
Manufacturer ELM
File Size 265.34 KB
Description Dual P-channel MOSFET
Datasheet download datasheet ELM54801AA-N Datasheet

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Dual P-channel MOSFET ELM54801AA-N ■General description ELM54801AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ■Features • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Avalanche current Avalanche energy Power dissipation Junction and storage temperature range L=0.1mH Ta=25°C Ta=70°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Ias, Iar Eas, Ear Pd Tj, Tstg Limit -30 ±12 -5 -4 -28 17 14 2.0 1.