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EN25S10A Datasheet Preview

EN25S10A Datasheet

1 Megabit 1.8V Serial Flash Memory

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EN25S10A
EN25S10A
1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
1 M-bit Serial Flash
- 1 M-bit / 128 KByte /512 pages
- 256 bytes per programmable page
Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
High performance
- 104MHz clock rate for one data bit
- 104MHz clock rate for two data bits
- 104MHz clock rate for four data bits
Burst Modes
- 8/16/32/64 linear burst with wrap-around
Low power consumption
- 5 mA typical active current
- 0.1µA typical power down current
Uniform Sector Architecture:
- 32 sectors of 4-Kbyte
- 4 blocks of 32-Kbyte
- 2 blocks of 64-Kbyte
- Any sector or block can be erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 0.30ms typical
- Sector erase time: 40ms typical
- 32KB Block erase time 100ms typical
- 64KB Block erase time 150ms typical
- Chip erase time: 0.6 seconds typical
Write Suspend and Write Resume
Lockable 512 byte OTP security sector
Support Serial Flash Discoverable
Parameters (SFDP) signature
Read Unique ID Number (Note)
Minimum 100K endurance cycle
Data Retention Time 20 years
Package Options
- 8 pins SOP 150mil body width
- 8 pins VSOP 150mil body width
- 8 contact USON 2x3x0.55 mm
- 8 contact USON 2x3x0.45 mm
- All Pb-free packages are compliant RoHS,
Halogen-Free and REACH.
Industrial temperature Range
GENERAL DESCRIPTION
The EN25S10A is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S10A supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual, Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0
(DI) and DQ1(DO), DQ2(WP#) and DQ3(HOLD#). SPI clock frequencies of up to 104MHz are supported
allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 416MHz (104MHz x 4) for
Quad Output when using the Dual/Quad Output Fast Read instructions. The memory can be
programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S10A also offers a sophisticated method for protecting individual blocks against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect
blocks, a system can unprotect a specific block to modify its contents while keeping the remaining
blocks of the memory array securely protected. This is useful in applications where program code is
patched or updated on a subroutine or module basis or in applications where data storage segments
need to be modified without running the risk of errant modifications to the program code segments.
The EN25S10A is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S10A can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
Note: For additional Read Unique ID Number feature specifications, please contact our
regional sales representatives.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Elite Semiconductor Memory Technology Inc.
Rev. E, Issue Date: 2017/05/26




EON

EN25S10A Datasheet Preview

EN25S10A Datasheet

1 Megabit 1.8V Serial Flash Memory

No Preview Available !

Figure.1 CONNECTION DIAGRAMS
EN25S10A
CS#
DO (DQ1)
WP# (DQ2)
VSS
1
2
3
4
8 VCC
7 HOLD# (DQ3)
6 CLK
5 DI (DQ0)
8 - LEAD SOP / VSOP
CS#
DO (DQ1)
WP# (DQ2)
VSS
1
2
3
4
8 VCC
7 HOLD# (DQ3)
6 CLK
5 DI (DQ0)
8 - LEAD USON / VDFN
Table 1. Pin Names
Symbol
CLK
DI (DQ0)
DO (DQ1)
CS#
WP# (DQ2)
HOLD# (DQ3)
Vcc
Vss
NC
Pin Name
Serial Clock Input
Serial Data Input (Data Input Output 0) *1
Serial Data Output (Data Input Output 1)
*1
Chip Enable
Write Protect (Data Input Output 2) *2
HOLD# pin (Data Input Output 3) *2
Supply Voltage (1.65-1.95 V)
Ground
No Connect
Note:
1. DQ0 and DQ1 are used for Dual and Quad instructions.
2. DQ0 ~ DQ3 are used for Quad instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Elite Semiconductor Memory Technology Inc.
Rev. E, Issue Date: 2017/05/26


Part Number EN25S10A
Description 1 Megabit 1.8V Serial Flash Memory
Maker EON
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