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EPC

EPC2007 Datasheet Preview

EPC2007 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2007 – Enhancement Mode Power Transistor
VDSS , 100 V
RDS(ON) , 30 mW
ID , 6 A
NEW PRODUCT
EPC2007
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
Drain-to-Source Voltage (Continuous)
100
V
VDS
Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
120
V
ID
Continuous (TA = 25˚C, θJA = 40)
Pulsed (25˚C, Tpulse = 300 µs)
6
A
25
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage
6
V
-5
TJ
Operating Temperature
TSTG Storage Temperature
-40 to 125
˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 75 µA
100
IDSS
Drain Source Leakage
VDS = 80 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V
VGS = -5 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1.2 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 6 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJB
Thermal Resistance, Junction to Board
RθJA
Thermal Resistance, Junction to Ambient (Note 1)
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
EPC2007 eGaN® FETs are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP
MAX
UNIT
V
20
60
µA
0.25
2
mA
0.1
0.5
1.4
2.5
V
24
30
mΩ
1.77
V
1.82
TYP
6.9
˚C/W
32
˚C/W
80
˚C/W
| PAGE 1




EPC

EPC2007 Datasheet Preview

EPC2007 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
PARAMETER
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
QG
Total Gate Charge (VGS = 5 V)
QGD
Gate-to-drain Charge
QGS
Gate-to Source Charge
QOSS
Output Charge
QRR
Source-Drain Recovery Charge
All measurements were done with substrate shorted to source.
TEST CONDITIONS
VDS = 50 V, VGS = 0 V
VDS = 50 V, ID = 6 A
VDS = 50 V, VGS = 0 V
EPC2007
MIN
TYP
MAX
UNIT
205
240
118
140
pF
6.6
8.2
2.1
2.8
0.61
1.2
0.52
0.70
nC
10.2
15.3
0
Figure 1: Typical Output Characteristics
40
VGS = 5
35
VGS = 4
VGS = 3
30
VGS = 2
25
20
15
10
5
00
0.5
1
1.5
2
VDS – Drain to Source Voltage (V)
Figure 3: RDS(ON) vs. VGS for Various Current
70
60
50
40
30
20
ID = 4 A
ID = 6 A
10
ID = 10 A
ID = 20 A
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate to Source Voltage (V)
Figure 2: Transfer Characteristics
40
35
25˚C
125˚C
30
VDS = 3V
25
20
15
10
5
0
.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS – Gate to Source Voltage (V)
Figure 4: RDS(ON) vs. VGS for Various Temperature
100
25˚C
125˚C
80
ID = 6 A
60
40
20
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate to Source Voltage (V)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 2



Part Number EPC2007
Description Power Transistor
Maker EPC
Total Page 3 Pages
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EPC2007 Datasheet PDF





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