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EPSON Electronics

SG615SHW Datasheet Preview

SG615SHW Datasheet

SOJ High Frequency Crystal Oscillator

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Crystal oscillator
mSOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-615t4sU.ecoriesHigh-density mounting-type SMD.
eeA general-purpose SMD with heat-resisting cylindrical AT-cut
hcrystal unit and allowing almost the same soldering temperature
taSas SMD IC.
aCylindrical AT crystal unit builtin, thus assuring high reliability.
.DProvided with output enable function.
wwwLow current consumption.
Specifications (characteristics)
Item
Symbol
SG-615P
SG-615PTJ
Specifications
SG-615PH
Remarks
mOutput frequency range
f0 1.0250 MHz to 26.0000 MHz
26.0001 MHz to 66.6667 MHz
oPower source
voltage
.cTemperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Soldering condition
VDD-GND
VDD
TSTG
TOPR
TSOL
UFrequency stability
t4Current consumption
Duty
C-MOS level
TTL level
eOutput voltage
heOutput load
condition (fan out)
C-MOS
TTL
SOutput enable/disable input voltage
taOutput disable current
Output rise time C-MOS level
TTL level
aOutput fall time C-MOS level
TTL level
f/f0
Iop
tw/t
VOH
(IOH)
VOL
(IOL)
CL
N
VIH
VIL
IOE
tTLH
tTHL
-0.3 V to +7.0 V
5.0 V±0.5 V
-55 °C to +125 °C
-20 °C to 70 °C (-40 °C to 85 °C)
Twice at under 260 °C within 10 s
or under 230 °C within 3 min.
B: ±50 x 10-6
C: ±100 x 10-6
23 mA Max.
35 mA Max.
40 % to 60 %
40 % to 60 %
45 % to 55 %
VDD -0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
-400 µA
-4 mA
0.4 V Max.
16 mA
8 mA
4 mA
50 pF Max.
50 pF Max.
10 TTL Max.
5 TTL Max.
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
12 mA Max.
8 ns Max.
28 mA Max.
5 ns Max.
20 mA Max.
7 ns Max.
7 ns Max.
5 ns Max.
Stored as bare product after unpacking
55 MHz Max.(-40 °C to +85 °C)
B type is possible up to 55 MHz
No load condition
C-MOS load: 1/2VDD
TTL load: 1.4 V
CL<_15 pF
IIH=1 µA Max.(OE=VDD)
IIL=-100 µA Min.(OE=GND) IIL=-500 µA Min.(OE=GND) PTJ
OE=GND
C-MOS load: 20 %80 % VDD
TTL load: 0.4 V2.4 V
C-MOS load: 80 %20 % VDD
TTL load: 2.4 V0.4 V
.DOscillation start up time
Aging
wShock resistance
tOSC 4 ms Max.
10 ms Max.
fa ±5 x 10-6/year Max.
S.R.
±20 x 10-6 Max.
Time at 4.5 V to be 0 s
Ta= +25 °C, VDD = 5 V, first year
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
Note: Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
wExternal by-pass capacitor is recommended.
wExternal dimensions
(Unit: mm)
Recommended soldering pattern
(Unit: mm)
#4 #3
SG-615P C
20.0000M
E 9352A
#1 #2
14.0 Max.
NO. Pin terminal
1 OE
2 GND
3 OUT
4 VDD
5.08 0.51
7.62
33
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EPSON Electronics

SG615SHW Datasheet Preview

SG615SHW Datasheet

SOJ High Frequency Crystal Oscillator

No Preview Available !

Crystal oscillator
Actual size
Specifications (characteristics)
Item
Symbol
SG-615PTW/STW
SG-615PHW/SHW
Specifications
SG-615PCW/SCW
Output frequency range
f0
Power source Max. supply voltage
voltage
Operating voltage
Temperature Storage temperature
range
Operating temperature
Soldering condition (lead part)
VDD-GND
VDD
TSTG
TOPR
TSOL
Frequency stability
f/f0
Current consumption
Output disable current
Output disable current
Duty
C-MOS level
TTL level
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output
C-MOS level
rise time
TTL level
Output
C-MOS level
fall time
TTL level
Iop
IoE
IST
tw/t
VOH
VOL
CL
VIH
VIL
tTLH
tTHL
55.0001 MHz to 135.0000 MHz
26.0001 MHz to
135.0000 MHz
-0.5 V to +7.0 V
5.0 V±0.5 V
3.3 V±0.3 V
-55 °C to +125 °C
-20 °C to +70 °C
-40 °C to +85 °C
Twice at under 260 °C within 10 s or under 230 °C within 3 min.
B: ±50 x 10-6 C: ±100 x 10-6
M: ±100 x 10-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50 µA Max.
40 % to 60 %
40 % to 60 %
VDD-0.4 V Min.
0.4 V Max.
15 pF Max.
2.0 V Min.
0.7 VDD Min.
0.8 V Max.
4 ns Max.
0.2 VDD Min.
4 ns Max.
4 ns Max.
4 ns Max.
4 ns Max.
4 ns Max.
Oscillation start up time
tOSC
10 ms Max.
Aging
fa ±5 x 10-6/year Max.
Shock resistance
S.R.
±20 x 10-6 Max.
Remarks
-20 °C to +70 °C
40 °C to +85 °C
No load condition
OE=GND
ST=GND
C-MOS load: 1/2VDD
TTL load: 1.4 V
IOH= -16 mA (*TW/HW)/-8 mA(*CW)
IOL= -16 mA (*TW/HW)/8 mA(*CW)
OE,ST
OE,ST
C-MOS load: 20 %80 % VDD
TTL load: 0.4 V2.4 V
C-MOS load: 80 %20 % VDD
TTL load: 2.4 V0.4 V
Time at 4.5 V to be 0 s
Ta=+25 °C, VDD =5 V
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Operating condition and Frequency band
Operating condition
1 MHz
5 V±0.5 V
Frequency stability:B
( -20 to +70 °C)
Frequency stability:C
( -20 to +70 °C)
1.025
SG-615P
1.025
SG-615P
3.3 V±0.3 V
Frequency stability:B
( -20 to +70 °C)
Frequency stability:C
( -20 to +70 °C)
Frequency stability:M
( -40 to +85 °C)
50 MHz
26 55
SG-615PTJ/PH
26 66.667
SG-615PTJ/PH
26
26
26
100 MHz
SG-615PTW/STW/PHW/SHW
SG-615PTW/STW/PHW/SHW
SG-615PCW/SCW
SG-615PCW/SCW
SG-615PCW/SCW
150 MHz
135
135
135
135
135
34


Part Number SG615SHW
Description SOJ High Frequency Crystal Oscillator
Maker EPSON Electronics
Total Page 2 Pages
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