900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






ESMT

F25L02PA-100PIG2F Datasheet Preview

F25L02PA-100PIG2F Datasheet

3V Only 2 Mbit Serial Flash Memory

No Preview Available !

ESMT
Flash
FEATURES
Single supply voltage 2.3~3.6V
Standard, Dual SPI
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 86MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz
(100MHz / 172MHz equivalent Dual SPI)
Low power consumption
- Active current: 20 mA
- Standby current: 25 µ A
- Deep Power Down current: 10 µ A
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 0.7 ms (typical)
F25L02PA (2F)
Operation Temperature Condition -40°C~85°C
3V Only 2 Mbit Serial Flash Memory
with Dual Output
Erase
- Chip erase time 0.5 sec (typical)
- Block erase time 0.15 sec (typical)
- Sector erase time 30 ms (typical)
Page Programming
- 256 byte per programmable page
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
End of program or erase detection
Write Protect ( WP )
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
Speed
F25L02PA -50PIG2F
50MHz
F25L02PA -86PIG2F
86MHz
F25L02PA -100PIG2F 100MHz
F25L02PA -50PAIG2F 50MHz
F25L02PA -86PAIG2F 86MHz
F25L02PA -100PAIG2F 100MHz
F25L02PA -50HIG2F
50MHz
F25L02PA -86HIG2F
86MHz
F25L02PA -100HIG2F 100MHz
Package
Comments
8-lead
SOIC
150 mil
Pb-free
8-lead
SOIC
200 mil
Pb-free
8-contact
WSON
6x5 mm
Pb-free
GENERAL DESCRIPTION
The F25L02PA is a 2Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 1,024 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 64 uniform sectors with 4K byte each; 4 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2012
Revision: 1.0
1/32




ESMT

F25L02PA-100PIG2F Datasheet Preview

F25L02PA-100PIG2F Datasheet

3V Only 2 Mbit Serial Flash Memory

No Preview Available !

ESMT
PIN CONFIGURATIONS
8- Lead SOIC
(SOIC 8L, 150mil Body, 1.27mm Pin Pitch)
(SOIC 8L, 208mil Body, 1.27mm Pin Pitch)
CE 1
SO 2
WP 3
VSS
4
F25L02PA (2F)
Operation Temperature Condition -40°C~85°C
8 VDD
7 HOLD
6 SCK
5 SI
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2012
Revision: 1.0
2/32


Part Number F25L02PA-100PIG2F
Description 3V Only 2 Mbit Serial Flash Memory
Maker ESMT
Total Page 30 Pages
PDF Download

F25L02PA-100PIG2F Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 F25L02PA-100PIG2F 3V Only 2 Mbit Serial Flash Memory
ESMT





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy