• Part: F25L05PA-50PG2D
  • Description: 3V Only 512 Kbit Serial Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 337.80 KB
Download F25L05PA-50PG2D Datasheet PDF
Elite Semiconductor Microelectronics Technology
F25L05PA-50PG2D
F25L05PA-50PG2D is 3V Only 512 Kbit Serial Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
FEATURES y Single supply voltage 2.3~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz - Fast Read Dual max frequency: 50MHz / 86MHz (100MHz / 172MHz equivalent Dual SPI) y Low power consumption - Active current: 22 m A - Standby current: 25 μ A - Deep Power Down current: 10 μ A y Reliability - 100,000 typical program/erase cycles - 20 years Data Retention y Program - Page programming time: 1.5 ms (typical) F25L05PA (2D) 3V Only 512 Kbit Serial Flash Memory with Dual Output y Erase - Chip erase time 1 sec (typical) - Block erase time 0.75 sec (typical) - Sector erase time 90 ms (typical) y Page Programming - 256 byte per programmable page y SPI Serial Interface - SPI patible: Mode 0 and Mode 3 y End of program or erase detection y Write Protect ( WP ) y Hold Pin ( HOLD ) y All Pb-free products are Ro HS-pliant - ORDERING INFORMATION Product ID F25L05PA - 50PG2D F25L05PA - 86PG2D F25L05PA - 50SG2D F25L05PA - 86SG2D Speed 50MHz 86MHz 50MHz 86MHz Package 8-lead SOIC 150 mil 8-pin TSSOP 173 mil (4.4mm) ments Pb-free Pb-free - GENERAL DESCRIPTION The F25L05PA is a 512Kbit, 3V only CMOS Serial Flash memory device. The device supports the standard Serial Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles. The memory array can be organized into 256 programmable pages of 256 byte each. 1 to 256 byte can be programmed at a time with the Page Program instruction. The device features sector erase architecture. The memory array is divided into 16 uniform sectors with 4K byte each; 1 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The device has Sector, Block or Chip Erase but no page erase. The sector...