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F49L800BA - 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory

This page provides the datasheet information for the F49L800BA, a member of the F49L800UA 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory family.

Datasheet Summary

Features

  • z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current  z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 K.

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Datasheet preview – F49L800BA

Datasheet Details

Part number F49L800BA
Manufacturer ESMT
File Size 464.03 KB
Description 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
Datasheet download datasheet F49L800BA Datasheet
Additional preview pages of the F49L800BA datasheet.

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Full PDF Text Transcription

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ESMT F49L800UA/F49L800BA Operation Temperature Condition -40°C~85°C 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory 1. FEATURES z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current  z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB, one 32 KB, and fifteen 64 KB)  z Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided.
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