• Part: F50D4G41XB
  • Description: 1.8V 4-Gbit SPI-NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.59 MB
Download F50D4G41XB Datasheet PDF
Elite Semiconductor Microelectronics Technology
F50D4G41XB
FEATURES - Voltage Supply: 1.8V (1.7 V ~ 1.95V) - Single-level cell (SLC) technology - Organization - Page size x1: 4352 bytes (4096 + 256 bytes) - Block size: 64 pages (256K + 16K bytes) - Plane size: 1 x 2048 blocks - Standard and extended SPI-patible serial bus interface - Instruction, address on 1 pin; data out on 1, 2, or 4 pins - Instruction on 1 pin; address, data out on 2 or 4 pins - Instruction, address on 1 pin; data in on 1 or 4 pins - Continuous read within block, configure-able by feature register - User-selectable internal ECC supported - 8 bits/sector - Array performance - 83 MHz clock frequency (MAX) - Page read: 30μs (MAX) with on-die ECC disabled; 135μs (MAX) with on-die ECC enabled - Page program: 200μs (TYP) with on-die ECC disabled; 240μs (TYP) with on-die ECC enabled - Block erase: 2ms (TYP) - Advanced features - Read page cache mode (x2, x4, Dual, Quad, and Random) - Read unique ID - Device initialization - Automatic device initialization after power-up -...