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ET-20N50 - N-Channel MOSFET

Description

This Power MOSFET is manufactured advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • RDS(on) (Max 0.26 Ω )@VGS=10V.
  • Gate Charge (Typical 90nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain.
  • ◀▲.
  • { 3. Source General.

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Datasheet preview – ET-20N50

Datasheet Details

Part number ET-20N50
Manufacturer ESTEK
File Size 277.42 KB
Description N-Channel MOSFET
Datasheet download datasheet ET-20N50 Datasheet
Additional preview pages of the ET-20N50 datasheet.

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    Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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