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ET830 - N-Channel MOSFET

Description

The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

  • RDS(ON) = 1.5Ω@VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability.
  • Symbol.
  • Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TST.

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Datasheet preview – ET830

Datasheet Details

Part number ET830
Manufacturer ESTEK
File Size 325.83 KB
Description N-Channel MOSFET
Datasheet download datasheet ET830 Datasheet
Additional preview pages of the ET830 datasheet.

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Full PDF Text Transcription

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ET830 5 Amps，500Volts N-Channel MOSFET ■ Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 1.5Ω@VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TSTG 76 0.6 5.0 3.
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