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53462N (SILICON)
thru
2N5349
MEDIUM-POWER NPN SILICON TRANSISTORS
· .. designed for switching and wide-band amplifier applications.
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc
• DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base CUrrent
Total Device Dissipation@ TC = 25'C Derate above 25°C
Operating and storage Junction Temperature Range
Symbol
VCEO VCB VEB IC IB PD
TJ• Tstg
2NS346 2NS347
80
2NS348 2NS349
100
80 100
6.0
7.0
1.