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2N5641 - NPN SILICON RF POWER TRANSISTORS

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Part number 2N5641
Manufacturer Unknown Manufacturer
File Size 346.74 KB
Description NPN SILICON RF POWER TRANSISTORS
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2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Power at 7.6 dB Gain -MAXIMUM RATINGS Rating Collect.,..
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