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2N5643 - NPN SILICON RF POWER TRANSISTORS

Download the 2N5643 datasheet PDF (2N5641 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon rf power transistors.

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Note: The manufacturer provides a single datasheet file (2N5641-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5643
Manufacturer Unknown Manufacturer
File Size 346.74 KB
Description NPN SILICON RF POWER TRANSISTORS
Datasheet download datasheet 2N5643 Datasheet

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Full PDF Text Transcription

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2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Power at 7.6 dB Gain -MAXIMUM RATINGS Rating Collect.,..
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