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2N6280 Datasheet Preview

2N6280 Datasheet

HIGH-POWER NPN SILICON TRANSISTORS

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2N 6278 thru 2N 6281 (SILICON)
HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifier
and switching circuit applications.
• High Collector Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min) - 2N6278
= 120 Vdc (Min) - 2N6279
= 140 Vdc (Min) - 2N6280
= 150 Vdc (Min) - 2N6281
• High DC Current Gain -
hFE = 30-120@ IC = 20 Adc
= 10 (Min) @ IC = 50 Adc
• Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC = 20 Adc
tr = 0.351ls (Max)
ts = 0.8 Ils (Max)
tf = 0.25 Ils (Max)
'MAXIMUM RATINGS
Rating
Svmbol
Collector-Base Voltage
VeB
Collector-Emitter Voltage
VeEO
Emitter-Base Voltage
VEB
Collector Current - Continuous
Peak
Ie
Base Current
IR
Total Device Dissipation @
Te=250e
Derate above 25°C
Po
Operating and Storage Junction TJ,T,tg
Temperature Range
THERMAL CHARACTERISTICS
I I2N6278 2N6279 2N6280[ 2N6281
I I I120 140 160 180
I I I100 120 140 150
. .6.0
.. ..50
100
.. 20
. ..... 250
1.43
.. ..-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
wf'e
°e
Characteristic
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Oat=-
250
~ 200
~
z
:! 150
~
ill
~ 100
e~ 50
o
o
FIGURE 1 - POWER DERATING
I"
"'" """"
.......
" .........
"
"25 50 15 100 125 150 115 200
TC, CASE TEMPERATURE {OCI
2-525
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100,120,140,150 VOLTS
250 WATTS
Q STYLE 1.
PIN 1. EMITTER
2 BASE
3 COLLECTOR
MIL I
1=DIM MIN MAX
A 21.72 22.23
B 18.92 19.69
C 1219 13.59
~~~
0.535
E 2.29 424 0.090 0.161
G 1 2 130
4
H-
2.67 - . DelOS
J 11.68 1257 0460 0.495
K 2380 2616 0937 1.030
L 6.10 660 0240 0260
N-
762 -
0.300
P 706 792 0278 0312
Q 152 267 0060 0105
S 7127 7249 02806 02854
T 1969 22 23 0775 0875
All JEOEC notes and dimensions apply.
CASE 188
TO-63




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2N6280 Datasheet Preview

2N6280 Datasheet

HIGH-POWER NPN SILICON TRANSISTORS

No Preview Available !

2N6278 thru 2N6281 (continued)
*ELECTRICAL CHARACTERISTICS(TC = 250 C unle.sotherwise noted)
I Characteristic
I Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage III
(lc = 50 mAde, IB = 0)
2N627B
2N6279
2N62B0
2N62Bl
VCEO(sus)
Collector Cutoff Current
(VeE = 50 Vdc, IB = 0)
(VeE = 60 Vdc, IB = 0)
(VeE = 70 Vdc, IB = 0)
(VeE = 75 Vdc, IB = 0)
2N627B
2N6279
2N62BO
2NS2Bl
ICEO
Collector Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VeE = Rated VCB, VEB(off) = 1.5 Vdc, Te= 150°C
Emitter Cutoff Current
(VBE = S.O Vdc, IC = 0)
ICEX
lEBO
ON CHARACTERISTICS (11
DC Current Gain
(lC = 1.0 Adc, VCE = 4.0 Vdc)
(lc = 20 Adc, VCE = 4.0 Vdcl
(lc = 50 Adc, VeE = 4.0 Vdcl
COllector-Emitter Saturation yoltage
(lC = 20 Adc, IB =2.0 Adcl
(lc = 50 Adc, IB = 10 Adcl
Sase-Emitter Saturation Voltage
(IC = 20 Adc, IB = 2.0 Adc)
(lc = 50 Adc, IB = 10 Ad.)
hFE
VCE(satl
VBE(satl
Base-Emitter On Voltage
(lC = 20 Adc, VCE = 4.0 Vdcl
VBE(onl
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (21
(lc ~ 1.0 Adc, VCE = 10,Ydc, f test = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
for
Cob
SWITCHING CHARACTERISTICS
Rise Time
(Vec = BO Vdc, IC = 20 Adc, IBI = 2.0 Adc, VBE (off) = 5.0 Vdcl
Storege Time
(VCC = BO Vdc, IC = 20 Adc, IBI = IB2 = 2.0 Adcl
tr
ts
Fall Time
(VCC = 80 Vdc, IC = 20 Adc, IBI = IB2 = 2.0 Adcl
tf
=*Indlcates JEDEC Registered Data (1) Pulse Test: Pulse Width"" 300 Ils, Duty Cvcle 2.0%.
Min
100
120
140
150
-
-
-
-
-
-
50
30
10
-
-
-
-
-
-
30
-
MIIx
--
-
-
50
50
50
50
10
1.0
100
-
120
-
1.2
3.0
I.B
3.5
I.B
-
SOO
0.35
O.BO
0.25
Unit
Vdc
,.Adc
"Adc
mAde
"Adc
-
Vdc
Vdc
Vdc
MHz
pF
"s
"s
".
FIGURE 2 - SWITCHING TIMES TEST CI RCUIT
RS =
10 Ohms
VCC
.SOV
RC =
4.0 Ohms
lN3S79
t"tf" 10ns
Duty Cycle = 0.5% ':'
-4.0 V
Note: For information on Figures 3 & 6, RB and RC
were varied to obtain desired test conditions.
FIGURE 3 -TURN ON TIME
2.0
1.0
0.7
0.5
It' VSElolf)' 5.0 V
] 0.3
~ 0.2
::::-...
;::
trIt'VCC-SOV
O.1
-"""
0.07
0.05
r=,=Ielis =110
TJ -25°C_
===
-/
0.03
0.02
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (AMPI
2-526


Part Number 2N6280
Description HIGH-POWER NPN SILICON TRANSISTORS
Maker ETC
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2N6280 Datasheet PDF






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