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2N6280 - HIGH-POWER NPN SILICON TRANSISTORS

Download the 2N6280 datasheet PDF. This datasheet also covers the 2N6278 variant, as both devices belong to the same high-power npn silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6278-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6280
Manufacturer Unknown Manufacturer
File Size 325.68 KB
Description HIGH-POWER NPN SILICON TRANSISTORS
Datasheet download datasheet 2N6280 Datasheet

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.
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