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3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application.
CASE 20 (T0-72)
O2 o
STYLE Z PIN 1. SOURCE Z. GATE
1 000 3
3. DRAIN
4. SUBSTRATE AND
CASE LEAD
MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VDS VDG VGS 1D PD
TJ Tstg
Value
35 35 50 30 300 1.7 -65 to +175 -65 to +200
Unit
Vdc Vdc Vdc mAdc mW mW;oC °c °c
HANDLING PRECAUTIONS:
MOS field-effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge.
3N156A Datasheet
