3N210
3N210 is N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS manufactured by Unknown Manufacturer.
3N209 (SILICON) 3N210
N- CHANNEL DUAL- GATE SILlCON- NITRIDE PASSIVATED MOS FIELD- EFFECT TRANSISTORS
- .. depletion mode dual gate transistors designed and characterized for UHF munications applications
- Two Packages OfferedHermetic Metal TO- 72
- 3N209 Micro-H Plastic
- 3N21 0
- Silicon Nitride Passivation for Excellent Long Term Stability
- Zener Diode Protected Gates
- Third Order Intermodulation Distortion Curve Provided
- mon Source Power GainGps = 10 dB (Min) @f = 500 MHz
- Noise Figure
- 6.0 dB Max @f = 500 MHz
N-CHANNEL DUAL GATE MOS FIELD- EFFECT TRANSISTORS
3N209 f
MAXIMUM RATINGS Rating
- Dram
- Source Voltage
- Orain Gate Voltage
Gate Current
- Draln CLlrrent Contmuous
Total...
