Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans
Features
- Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON)
VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information
Device
60N035T 60N035S
Package
TO-220 TO-263 ( D2 )
Temp. 0 to 150°C 0 to 150°C
Absolute Maximum Rating
Symbol
ID
Parameter
Drain Current Continues Pulsed Drain-Source Voltage Gate S.
60N035 Datasheet
