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60N035 Datasheet N-channel Field Effect Transistor

Manufacturer: Unknown Manufacturer

Overview: Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance.

Datasheet Details

Part number 60N035
Manufacturer Unknown Manufacturer
File Size 34.15 KB
Description N-Channel Field Effect Transistor
Datasheet 60N035_ETC.pdf

General Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts.

Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts

Key Features

  • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate S.

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Part Number Description

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