AlGaInP Red LED chip
Features:
(1) High luminous intensity
(2) Long operation life
(3) 100% probing test
(4) Low driving current applications
Characteristics:
(1) Size
Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm)
Chip Thickness: 7 mil (180±25µm ) typical
Bonding Pad: 6 mil (152±10 µm) in diameter
(2) Metallization:
P electrode：Au pad
N electrode：Au alloy
(3) Structure:
Refer to drawing
Type:
708SRAP-R-AU-01
1.6 0.8
unit: mil
6 78
P-electrode
AlGaInP epilayers
n-GaAs sub.
7
N-electrode
Electro-optical characteristics:
Parameter
Symbol Condition Min. Typ. Max. Unit
Forward voltage
Vf1 If = 10uA 1.25
Vf2 If = 6.3mA ---
---
2.0
---
2.4
V
V
Reverse voltage
Vr
Ir =10uA
9
---
---
V
Dominant wavelength(1)
λ p If = 6.3mA 650
---
685 nm
Luminous intensity(2)(3)
Po A If=6.3mA 0.016
---
0.036 mW
(1) Basically, wavelength uniformity is λd±5nm; however, customers’ special requirements are also welcome.
(2) Customer’s special requirements are also welcome.
(3) Luminous intensity is measured by EPISTAR’s equipment on bare chips.
Hints: Bonding temperature => Do not apply over 280℃on chip for 10 seconds.
CC-200805-B
This product is made and sold under one or more of the following patents: Taiwan Patent Certificate Nos.: 098998; 113696; 128153; 131010; 144415;
148677; 170789; 183481; 183846; U.S. Patent Nos.: 5,008,718; 5,164,798; 5,233,204; 5,789,768; 6,078,064; 6,057,562; 6,225,648; 6,552,367;
6,876,005, and any foreign counterparts.
