A1810 - Silicon PNP Epitaxial

Features

Excellent high frequency characteristics fT = 300 MHz typ.
High voltage and low output capacitance VCEO =.
200 V, Cob = 5.0 pF typ.
Suitable for wide band video amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temper.

A1810 silicon pnp epitaxial by ETC - Datasheet Preview

Datasheet Details

Part number	A1810
Manufacturer	Unknown Manufacturer
File Size	31.82 KB
Description	Silicon PNP Epitaxial
Datasheet	A1810 Datasheet

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Full PDF Text Transcription

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2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings –200 –200 –5 –0.2 –0.5 1.

Published: Mar 4, 2007 |