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D13001S Datasheet NPN POWER TRANSISTER

Manufacturer: Unknown Manufacturer

Datasheet Details

Part number D13001S
Manufacturer Unknown Manufacturer
File Size 124.55 KB
Description NPN POWER TRANSISTER
Download D13001S Download (PDF)

General Description

3DD13001S is a silicon npn power transistor.

The main process include high voltage planer process,triple difussion process and multi-surface passivation.

Absolute maximum ratings (Tc=25 ) ITEM Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Junction temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj Tstg RATING 600 400 9 0.5 1 150 -55~+150 UNITS V V V A W 2005.02 1/6 Electrical charactristics (Tc=25 ) Item Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base Cutoff current Collector-emitter Cutoff current Emitter-base Cutoff current DC current gain Collector-emitter Saturation voltage Base-emitter Saturation voltage Fall time Storage time Transition frequency Symbol Testing term V(BR)CEO Ic=10mA,IB=0 V(BR)CBO Ic=1mA,IB=0 V(BR)EBO IE=1mA,Ic=0 ICBO VCB=580V, IE=0 ICEO VCE=390V,IB=0 IEBO VEB=7V, IC=0 hFE VCE=20V, IC=20mA VCE(sat)(1) IC=50mA, IB=5mA VCE(sat)(2) IC=100mA, IB=10mA VBE(sat) IC=50mA, IB=5mA VCC=24V IC=0.1A, tf IB1=-IB2=0.02A ts VCC=24V IC=0.1A, IB1=-IB2=0.02A fT VCE=10V, Ic=20mA Thermal charactristics Item Thermal resistance Junction to atmosphere Rth(j-a) Symbol D13001S Min Max Units 400 V 600 V 9 V 5 A 10 A 5 A 8 40 0.5 V 1 V 1.2 V 0.7 S 4 S 4 - MHz Min Max Units 125 /W 2005.02 2/6 Typical characteristics: D13001S Base-emitter saturation voltage 2005.02 3/6 Package dimensions TO 92 D13001S 2005.02 Units mm 4/6 D13001S NOTES 1.

Overview

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/.

Key Features

  • High breakdown voltage High current capability High switching speed High reliability.