Datasheet Summary
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MJE3055T/MJE2955T
GENERAL DESCRIPTION plementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose
SILICON EPITAXIAL PLANAR TRANSISTOR
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s
VCBO VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER...