GT4123BCTA Datasheet, Multiplier, ETC

GT4123BCTA Features

• Multiplier
• two-quadrant video multiplication
• operation from ±4.5 V to ±13.2 V supply voltages
• 20 MHz ±0.1 dB video & control channel bandwidth
• ultra low dif

PDF File Details

Part number:

GT4123BCTA

Manufacturer:

ETC

File Size:

144.52kb

Download:

📄 Datasheet

Description:

Two channel video multiplier. The GT4123B is a monolithic dual-channel video multiplier for use in a wide range of applications including broadcast and multimedia.

GT4123BCTA Application

• Applications including broadcast and multimedia. Featuring two wideband video inputs and a single control input, the GT4123B achieves broadcast qual

TAGS

GT4123BCTA

ETC

📁 Related Datasheet

GT4123BCDA - Two Channel Video Multiplier (ETC)
GT4123B Two Channel Video Multiplier DATA SHEET FEATURES • two-quadrant video multiplication • operation from ±4.5 V to ±13.2 V supply voltages • 20 .

GT4123BCKA - Two Channel Video Multiplier (ETC)
GT4123B Two Channel Video Multiplier DATA SHEET FEATURES • two-quadrant video multiplication • operation from ±4.5 V to ±13.2 V supply voltages • 20 .

GT4123B - Two Channel Video Multiplier (ETC)
GT4123B Two Channel Video Multiplier DATA SHEET FEATURES • two-quadrant video multiplication • operation from ±4.5 V to ±13.2 V supply voltages • 20 .

GT4122 - Video Multiplier (Gennum)
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

GT400P10 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
GT400P10T P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT400P10T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
GT400P10T P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT4050D - Photovoltaic bypass module diode (GREATEEN)
GT4050D ■ Features ■ ● ， IF（AV）40A VRRM 50V ● ，。 Outline Dimensions and Mark ■ Marking Code ● GT4050D ■（） Limiting Values（Absolute Maximum Ra.

GT40G121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applicatio.

GT40J121 - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-.

GT40J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD inclu.