IM29LV001T memory equivalent, flash memory.
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* 0.40 µm, triple-poly double-metal CMOS process Single power supply operation 3.3V ± 10% for both read and write High endurance > 10,000 pro.
the IM29LV001 is specified for more than 10 4 cycling endurance and greater than 10 years of data retention.
This adva.
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